bdw83, bdw83a, bdw83b, BDW83C, bdw83d npn silicon power darlingtons
1 august 1978 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bdw84, bdw84a, bdw84b, bdw84c and bdw84d 150 w at 25c case temperature 15 a continuous collector current minimum h fe of 750 at 3 v, 6 a sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraaa b c e 1 2 3 absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. these values apply when the base-emitter diode is open circuited. 2. derate linearly to 150c case temperature at the rate of 1.2 w/c. 3. derate linearly to 150c free air temperature at the rate of 28 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = 5 ma, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = 20 v. rating symbol value unit collector-base voltage (i e = 0) bdw83 bdw83a bdw83b BDW83C bdw83d v cbo 45 60 80 100 120 v collector-emitter voltage (i b = 0) (see note 1) bdw83 bdw83a bdw83b BDW83C bdw83d v ceo 45 60 80 100 120 v emitter-base voltage v ebo 5v continuous collector current i c 15 a continuous base current i b 0.5 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 150 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 3.5 w unclamped inductive load energy (see note 4) ?li c 2 100 mj operating junction temperature range t j -65 to +150 c operating temperature range t stg -65 to +150 c operating free-air temperature range t a -65 to +150 c
bdw83, bdw83a, bdw83b, BDW83C, bdw83d npn silicon power darlingtons 2
august 1978 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 30 ma i b = 0 (see note 5) bdw83 bdw83a bdw83b BDW83C bdw83d 45 60 80 100 120 v i ceo collector-emitter cut-off current v ce = 30 v v ce = 30 v v ce = 40 v v ce = 50 v v ce = 60 v i b =0 i b =0 i b =0 i b =0 i b =0 bdw83 bdw83a bdw83b BDW83C bdw83d 1 1 1 1 1 ma i cbo collector cut-off current v cb = 45 v v cb = 60 v v cb = 80 v v cb = 100 v v cb = 120 v v cb = 45 v v cb = 60 v v cb = 80 v v cb = 100 v v cb = 120 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 150c t c = 150c t c = 150c t c = 150c t c = 150c bdw83 bdw83a bdw83b BDW83C bdw83d bdw83 bdw83a bdw83b BDW83C bdw83d 0.5 0.5 0.5 0.5 0.5 5 5 5 5 5 ma i ebo emitter cut-off current v eb = 5 v i c =0 2 ma h fe forward current transfer ratio v ce = 3 v v ce = 3 v i c = 6 a i c =15 a (see notes 5 and 6) 750 100 20000 v be(on) base-emitter voltage v ce = 3 v i c = 6 a (see notes 5 and 6) 2.5 v v ce(sat) collector-emitter saturation voltage i b = 12 ma i b = 150 ma i c = 6 a i c =15 a (see notes 5 and 6) 2.5 4 v v ec parallel diode forward voltage i e = 15 a i b = 0 3.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 0.83 c/w r ja junction to free air thermal resistance 35.7 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = 10 a v be(off) = -4.2 v i b(on) = 40 ma r l = 3 ? i b(off) = -40 ma t p = 20 s, dc 2% 0.9 s t off turn-off time 7s
bdw83, bdw83a, bdw83b, BDW83C, bdw83d npn silicon power darlingtons 3
august 1978 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 05 20 10 10 h fe - typical dc current gain 70000 100 1000 10000 tcs140ag t c = -40c t c = 25c t c = 100c v ce = 3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a 05 20 10 10 v ce(sat) - collector-emitter saturation voltage - v 0 05 10 15 20 tcs140ah t p = 300 s, duty cycle < 2% i b = i c / 100 t c = -40c t c = 25c t c = 100c base-emitter saturation voltage vs collector current i c - collector current - a 05 20 10 10 v be(sat) - base-emitter saturation voltage - v 0 05 10 15 20 25 30 tcs140ai t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
bdw83, bdw83a, bdw83b, BDW83C, bdw83d npn silicon power darlingtons 4
august 1978 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 01 10 10 100 sas140ab bdw83 bdw83a bdw83b BDW83C bdw83d maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 120 140 160 tis140ab
bdw83, bdw83a, bdw83b, BDW83C, bdw83d npn silicon power darlingtons 5
august 1978 - revised september 2002 specifications are subject to change without notice. sot-93 3-pin plastic flange-mount package this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. mechanical data sot-93 all linear dimensions in millimeters 4,90 4,70 1,37 1,17 0,78 0,50 2,50 typ. 15,2 14,7 12,2 max. 16,2 max. 18,0 typ. 31,0 typ. 1,30 1,10 11,1 10,8 4,1 4,0 3,95 4,15 1 2 3 note a: the centre pin is in electrical contact with the mounting tab. mdxxaw ?
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